SUD25N06-45L
v ds (v) r ds(on) ( ) i d (a) 60 0.035 @ v gs = 10 v 25 60 0.045 @ v gs = 4.5 v 22 to-252 s gd top view drain connected to tab order number: SUD25N06-45L d g s n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 25 a continuous drain current (t j = 175 c) t c = 100 c i d 16 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 25 avalanche current i ar 25 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 31 mj maximum power dissipation t c = 25 c p d 50 w maximum power dissipation t a = 25 c p d 2.5 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit maximum junction-to-ambient a r thja 60 c/w maximum junction-to-case r thjc 3.0 c/w n-channel 60 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5
parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 60 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a v ds = 60 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10v 20 a dis os r i b v gs = 10 v, i d = 12 a 0.025 0.035 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 12 a, t j = 125 c 0.045 0.063 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 12 a, t j = 175 c 0.058 0.081 v gs = 4.5 v, i d = 12 a 0.036 0.045 forward transconductance b g fs v ds = 15 v, i d = 12 a 15 25 s dynamic input capacitance c iss v 0 v v 25 v f 1 mh 1320 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 210 pf reverse transfer capacitance c rss 56 total gate charge c q g v30vv10vi25a 26 40 c gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 25 a 7.5 nc gate-drain charge c q gd 4.5 turn-on delay time c t d(on) v30vr12 10 20 rise time c t r v dd = 30 v, r l = 1.2 i25av 10vr75 10 20 ns turn-off delay time c t d(off) dd , l i d 25 a, v gen = 10 v, r g = 7.5 31 45 ns fall time c t f 10 20 source-drain diode ratings and characteristics (t c = 25 c) a pulsed current i sm 30 a diode forward voltage v sd i f = 25 a, v gs = 0 v 1.5 v reverse recovery time t rr i f = 25 a, di/dt = 100 a/ s 60 90 ns reverse recovery charge q rr i f = 25 a , di/dt = 100 a/ s 0.13 c notes: a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www.freescale.net.cn 2 / 5 SUD25N06-45L n-channel 60 v (d-s) 175 c mosfet
output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) w ) v gs transconductance (s) g fs 0 6 12 18 24 30 0246810 0 2 4 6 8 10 0 6 12 18 24 30 0 10 20 30 40 50 0 6 12 18 24 30 0 0.025 0.050 0.075 0.100 0 6 12 18 24 30 0 6 12 18 24 30 012345 25 c 55 c t c = 125 c v ds = 30 v i d = 25 a v gs = 5, 6, 7, 8, 9, 10 v v gs = 10 v c rss t c = 55 c 25 c 125 c 4 v 1, 2, 3 v v gs = 4.5 v i d drain current (a) 0 300 600 900 1200 1500 1800 0 102030405060 c iss c oss www.freescale.net.cn 3 / 5 SUD25N06-45L n-channel 60 v (d-s) 175 c mosfet
on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) w ) source current (a) i s 0 0.5 1.0 1.5 2.0 2.5 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 12 a t j = 25 c t j = 150 c
normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 duty cycle = 0.5 1 single pulse safe operating area v ds drain-to-source voltage (v) drain current (a) i d 50 10 0.1 t c = 25 c single pulse 0.1 1 10 100 limited by r ds(on) 1 ms 10 ms 100 ms dc, 1 s 100 m s 1 drain current vs. case temperature t c case temperature ( c) v ds drain-to-source voltage (v) drain current (a) i d 0 6 12 18 24 30 0 25 50 75 100 125 150 175 www.freescale.net.cn 4 / 5 SUD25N06-45L n-channel 60 v (d-s) 175 c mosfet
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